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irf3205pbf hexfet ? power mosfet 07/23/10 absolute maximum ratings parameter typ. max. units r jc junction-to-case ??? 0.75 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 thermal resistance www.irf.com 1 v dss = 55v r ds(on) = 8.0m ? i d = 110a s d g to-220ab description advanced hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. advanced process technology ultra low on-resistance dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated lead-free parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 110 i d @ t c = 100c continuous drain current, v gs @ 10v 80 a i dm pulsed drain current 390 p d @t c = 25c power dissipation 200 w linear derating factor 1.3 w/c v gs gate-to-source voltage 20 v i ar avalanche current 62 a e ar repetitive avalanche energy 20 mj dv/dt peak diode recovery dv/dt 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbf?in (1.1n?m) pd-94791b
irf3205pbf 2 www.irf.com s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source c urrent integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 62a, v gs = 0v t rr reverse recovery time ??? 69 104 ns t j = 25c, i f = 62a q rr reverse recovery charge ??? 143 215 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 110 390 a starting t j = 25c, l = 138h r g = 25 ? , i as = 62a. (see figure 12) repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) i sd 62a di/d 207a/s, v dd v (br)dss , t j 175c pulse width 400s; duty cycle 2%. electrical characteristics @ t j = 25c (unless otherwise specified) calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.057 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 8.0 m ? v gs = 10v, i d = 62a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 44 ??? ??? s v ds = 25v, i d = 62a ??? ??? 25 a v ds = 55v, v gs = 0v ??? ??? 250 v ds = 44v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v q g total gate charge ??? ??? 146 i d = 62a q gs gate-to-source charge ??? ??? 35 nc v ds = 44v q gd gate-to-drain ("miller") charge ??? ??? 54 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 14 ??? v dd = 28v t r rise time ??? 101 ??? i d = 62a t d(off) turn-off delay time ??? 50 ??? r g = 4.5 ? t f fall time ??? 65 ??? v gs = 10v, see fig. 10 between lead, ??? ??? 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 3247 ??? v gs = 0v c oss output capacitance ??? 781 ??? v ds = 25v c rss reverse transfer capacitance ??? 211 ??? pf ? = 1.0mhz, see fig. 5 e as single pulse avalanche energy ??? 1050 264 mj i as = 62a, l = 138 h nh l d internal drain inductance l s internal source inductance ??? ??? s d g i gss ns 4.5 7.5 i dss drain-to-source leakage current this is a typical value at device destruction and represents operation outside rated limits. this is a calculated value limited to t j = 175c.
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1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 107a 1 10 100 1000 4 6 8 10 12 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j
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$ 1 10 100 v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 5000 6000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20 40 60 80 100 120 0 2 4 6 8 10 12 14 16 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 62a v = 11v ds v = 27v ds v = 44v ds 1 10 100 1000 10000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 0.1 1 10 100 1000 0.2 0.8 1.4 2.0 2.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j
irf3205pbf www.irf.com 5 "#

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irf3205pbf 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +, !
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irf3205pbf www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - /'0' 1
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irf3205pbf 8 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/2010 data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. to-220ab package is not recommended for surface mount application

international part number rect ifier lot code as s e mb l y logo year 0 = 2000 dat e code week 19 line c lot code 1789 e xample : t his is an irf 1010 note: "p" in assembly line position i ndi cates " l ead - f r ee" in the assembly line "c" as s e mb led on ww 19, 2000 notes: 1. for an automotive qualified version of this part please see http://www.irf.com/product-info/auto/ 2. for the most current drawing please refer to ir website at http://www.irf.com/package/

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